Test terminal and setup system including the same of substrate processing apparatus

ABSTRACT

A setup system at least including a substrate processing apparatus and a test terminal is provided. The substrate processing apparatus includes a plurality of process chambers, a plurality of process chamber control units, a comprehensive control unit and an operation unit. The test terminal is connected to the plurality of process chamber control units while the comprehensive control unit and the operation unit are disconnected from the plurality of process chamber control units. The test terminal transmits a process chamber test operation command to the plurality of process chamber control units by executing a test terminal program. The setup system is capable of reducing time necessary for a setup process when starting to operate the substrate processing apparatus with the plurality of process chambers.

CROSS-REFERENCE TO RELATED PATENT APPLICATION

The present application is a divisional application of application Ser.No. 12/563,205, filed on Sep. 21, 2009; which claims priority under 35U.S.C. §119 of Japanese Patent Application No. 2008-248798, filed onSep. 26, 2008 and Japanese Patent Application No. 2009-192373, filed onAug. 21, 2009, the entire contents of which are hereby incorporated byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a test terminal and a setup system of asubstrate processing apparatus with a plurality of process furnaces, andin particular, to a preparatory work that is performed before startingan operation of a substrate processing apparatus.

2. Description of the Prior Art

A conventional substrate processing apparatus which performs amanufacturing process of a semiconductor device such as DRAM includes aplurality of process furnaces each including a process chamber whichprocesses a substrate, a plurality of process furnace control unitsconnected to the plurality of process furnaces to individually controloperations of the plurality of process furnaces, a comprehensive controlunit connected to the plurality of process furnace control units tocomprehensively control the operations of the process furnaces throughthe plurality of process furnace control units, and an operation unitconnected to the comprehensive control unit and the plurality of processfurnace control units to transmit operation commands to the plurality ofprocess furnace control units through the comprehensive control unitand, at the same time, to receive operation reports from the pluralityof process furnace control units through the comprehensive control unit.

In order to start the operation of the substrate processing apparatus,the substrate processing apparatus is installed, electrical facilitiesare interconnected, and gas supply lines and exhaust lines areconnected. Thereafter, various processes (hereinafter, collectivelyreferred to as a setup process) such as I/O check (I/O operation checkof various input/output valves provided in the substrate processingapparatus), interlock check (depressurization operation check of variouschambers or depressurization chambers provided in the substrateprocessing apparatus), and robot teaching (carrying operation check ofcarrying mechanism provided in the substrate processing substrate) needto be performed at each process furnace.

To promptly start the operation of the substrate processing apparatus,it is preferable to reduce the total time necessary for the setupprocess by performing the setup process once concurrently at eachprocess furnace.

However, even though the number of operators for the setup processincreases, it is difficult to reduce the total time necessary for thesetup process. In the setup process of the conventional substrateprocessing apparatus, such as I/O check, interlock check and robotteaching, the operators must transmit the operation command from theoperation unit, and thus, it is difficult to perform the setup processonce concurrently because the number (one) of the operation unitprovided in the substrate processing apparatus is limited.

The reduction of the time necessary for the setup time may be achievedby installing a test program dedicated to the setup process into theprocess furnace control units and performing the setup process inparallel at the process furnace control units. However, since the actualprogram used after the start of the operation and the test programinstalled into the process furnace control units are different from eachother, it is difficult to confirm whether problems arise when the actualprogram is executed, even though the setup process is performed in theabove-described manner.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a test terminal and asetup system of a substrate processing apparatus, which is capable ofreducing time necessary for a setup process when starting to operate asubstrate processing apparatus with a plurality of process furnaces.

According to an aspect of the present invention, there is provided asetup system at least comprising: a substrate processing apparatusincluding: a plurality of process chambers configured to processsubstrates; a plurality of process chamber control units configured toindividually control operations of the plurality of process chambers; acomprehensive control unit configured to comprehensively control theoperations of the plurality of process chambers through the plurality ofprocess chamber control units; and an operation unit configured toreceive an operation report from the plurality of process chambercontrol units through the comprehensive control unit; and a testterminal including a test terminal program, the test terminal beingconnected to the plurality of process chamber control units with thecomprehensive control unit and the operation unit being disconnectedfrom the plurality of process chamber control units, wherein the testterminal transmits a process chamber test operation command to theplurality of process chamber control units by executing the testterminal program, and the plurality of process chamber control unitsindividually test the operations of the plurality of process chambersaccording to the process chamber test operation command received fromthe test terminal, and transmit process chamber test operation reportsto the test terminal.

According to another aspect of the present invention, there is provideda setup system at least comprising: a substrate processing apparatusincluding: a plurality of process chambers configured to processsubstrates; a plurality of process chamber control units configured toindividually control operations of the plurality of process chambers; acomprehensive control unit configured to comprehensively control theoperations of the plurality of process chambers through the plurality ofprocess chamber control units; and a first operation unit configured toreceive operation reports from the plurality of process chamber controlunits through the comprehensive control unit; and a test terminalexecuting a test terminal program, the test terminal being connected tothe plurality of process chamber control units with the comprehensivecontrol unit and the first operation unit being disconnected from theplurality of process chamber control units, the test terminal comprisinga pseudo comprehensive control unit configured to comprehensivelycontrol the operations of the plurality of process chambers through theprocess chamber control units; and a second operation unit configured toreceive process chamber test operation reports from the process chambercontrol units through the pseudo comprehensive control unit, wherein thesecond operation unit transmits a process chamber test operation commandto the plurality of process chamber control units through the pseudocomprehensive control unit, and receives through the pseudocomprehensive control unit the process chamber test operation reportsobtained by individually testing the operations of the plurality ofprocess chambers by the plurality of process chamber control unitsaccording to the process chamber test operation command received fromthe pseudo comprehensive control unit.

According to still another aspect of the present invention, there isprovided a test terminal of a setup system configured to execute a testterminal program performing functions of: transmitting a process chambertest operation command to a plurality of process chamber control unitsthrough a pseudo comprehensive control unit; and receiving through thepseudo comprehensive control unit process chamber test operation reportsobtained by individually testing operations of the plurality of processchambers by the plurality of process chamber control units according tothe process chamber test operation command received from the pseudocomprehensive control unit.

According to still another aspect of the present invention, there isprovided a setup system at least comprising: a substrate processingapparatus including: a plurality of process chambers configured toprocess substrates; a plurality of process chamber control unitsconfigured to individually control operations of the plurality ofprocess chambers; a comprehensive control unit configured tocomprehensively control the operations of the plurality of processchambers through the plurality of process chamber control units; and afirst operation unit configured to receive operation reports from theplurality of process chamber control units through the comprehensivecontrol unit; and a test terminal comprising a pseudo comprehensivecontrol unit configured to comprehensively control the operations of theplurality of process chambers through the process chamber control units;and a second operation unit configured to receive process chamber testoperation reports from the process chamber control units through thepseudo comprehensive control unit, wherein the test terminal isconnected to the plurality of process chamber control units with thecomprehensive control unit and the first operation unit beingdisconnected from the plurality of process chamber control units, andthe second operation unit transmits a process chamber test operationcommand to the plurality of process chamber control units through thepseudo comprehensive control unit, and receives through the pseudocomprehensive control unit the process chamber test operation reportsobtained by individually testing the operations of the plurality ofprocess chambers by the plurality of process chamber control unitsaccording to the process chamber test operation command received fromthe pseudo comprehensive control unit.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic configuration diagram of a cluster type substrateprocessing apparatus in accordance with an embodiment of the presentinvention.

FIG. 2 is a schematic configuration diagram of an in-line type substrateprocessing apparatus in accordance with another embodiment of thepresent invention.

FIG. 3 is a block diagram illustrating the configuration of a controlunit in the substrate processing apparatus in accordance with anembodiment of the present invention.

FIG. 4 is a flowchart of a substrate processing process which isperformed by the substrate processing apparatus in accordance with anembodiment of the present invention.

FIG. 5 is a schematic diagram illustrating an exemplary operation of thecontrol unit in the substrate processing process in accordance with theembodiment of the present invention.

FIG. 6 is a flowchart of a process furnace test process which isperformed in the substrate processing apparatus in accordance with anembodiment of the present invention.

FIG. 7 is a schematic diagram illustrating an exemplary operation of thecontrol unit in the process furnace test process in accordance with theembodiment of the present invention.

FIG. 8 is a flowchart of a carrying test process which is performed inthe substrate processing apparatus in accordance with an embodiment ofthe present invention.

FIG. 9 is a schematic diagram illustrating an exemplary operation of thecontrol unit in the carrying test process in accordance with theembodiment of the present invention.

FIG. 10 is a schematic configuration diagram illustrating the extractionof a PMC operation program from a conventional operation unit programand the creation of a test program.

FIG. 11 is a schematic diagram illustrating an exemplary configurationof a program for a test terminal in accordance with an embodiment of thepresent invention.

FIG. 12 is a table diagram showing an example of an operation scheduleof a conventional setup process.

FIG. 13 is a table diagram showing an example of an operation scheduleof a setup process in accordance with an embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

<Exemplary Embodiment of the Present Invention>

Hereinafter, the configuration and operation of a substrate processingapparatus in accordance with an embodiment of the present invention willbe described.

(1) Configuration of Substrate Processing Apparatus

First, the configuration of a substrate processing apparatus inaccordance with an embodiment of the present invention will be describedbelow with reference to FIG. 1 and FIG. 3. FIG. 1 is a schematicconfiguration diagram of a cluster type substrate processing apparatusin accordance with an embodiment of the present invention. FIG. 3 is ablock diagram illustrating the configuration of a control unit in thesubstrate processing apparatus in accordance with an embodiment of thepresent invention. The cluster type substrate processing apparatus inaccordance with the current embodiment of the present invention isdivided into a vacuum side and an atmosphere side.

(Configuration of Vacuum Side)

On the vacuum side of the cluster type substrate processing apparatus, avacuum-tight sealable vacuum carrying chamber (transfer chamber) TM,vacuum lock chambers (load lock chambers) VL1 and VL2 as preliminarychambers, process chambers PM1 and PM2 as process furnaces each having aprocess chamber which processes a substrate such as a wafer W, andcooling chambers CS1 and CS2 which cools the wafer W are installed. Thevacuum lock chambers VL1 and VL2, the process chambers PM1 and PM2, andthe cooling chambers CS1 and CS2 are disposed around the periphery ofthe vacuum carrying chamber TM in a star-shaped form (cluster-shapedform).

The vacuum carrying chamber TM is configured in a load lock chamberstructure which can withstand a pressure (negative pressure) such as avacuum state lower than atmospheric pressure. Also, in accordance withthe embodiment of the present invention, a housing of the vacuumcarrying chamber TM has a hexagonal shape in a plan view, and the topand bottom ends of the housing are formed in a closed box shape.

The inside of the vacuum carrying chamber TM is provided with a vacuumrobot VR as a vacuum carrying mechanism. The vacuum robot VR mutuallycarries the wafer W to an arm used as a substrate loading section amongthe vacuum lock chambers VL1 and VL2, the process chambers PM1 and PM2and the cooling chamber CS1 and CS2. In addition, the vacuum robot VR isconfigured to be movable upward and downward with an elevator EV whilethe airtightness of the vacuum carrying chamber TM is maintained.Furthermore, at certain positions (near gate valves) in front of thevacuum lock chambers VL1 and VL2, the process chambers PM1 and PM2 andthe cooling chambers CS1 and CS2, wafer existence/nonexistence sensorsare fixed as substrate detection units which detectexistence/nonexistence of the wafer W.

The process chambers PM1 and PM2 are configured to give an added valueto the wafer W, for example, by performing a process of forming a thinfilm on the wafer W by a Chemical Vapor Deposition (CVD) method or aPhysical Vapor Deposition (PVD) method, a process of forming an oxidefilm or a nitride film on the surface of the wafer W, or a process offorming a metal thin film on the wafer W. In addition to a gasintroduction/exhaust mechanism (not shown) and a plasma dischargemechanism (not shown), the process chambers PM1 and PM2 are providedwith mass flow controllers (MFC) 11 which control a flow rate of aprocess gas supplied into the process chambers PM1 and PM2 illustratedin FIG. 3, automatic pressure controllers (APC) 12 which controlpressure inside the process chambers PM1 and PM2, temperature regulators13 which control temperature inside the process chambers PM1 and PM2,and input/output valve I/Os 14 which control on/off of a process gassupply or exhaust valve. While exhausting the insides of the processchambers PM1 and PM2 by the gas exhaust mechanism and supplying theprocess gas into the process chambers PM1 and PM2 by the gasintroduction mechanism, high-frequency power is supplied to the processchambers PM1 and PM2 to generate plasma inside the process chambers PM1and PM2, and the surface of the wafer W is processed.

The vacuum lock chambers VL1 and VL2 are used as preliminary chamberswhich load the wafer W into the vacuum carrying chamber TM, or aspreliminary chambers which unload the wafer W from the vacuum carryingchamber TM. At the insides of the vacuum lock chambers VL1 and VL2,buffer stages ST1 and ST2 are respectively fixed to temporarily supportthe wafer W for the loading and unloading of the substrate.

The vacuum lock chambers VL1 and VL2 are designed to communicate withthe vacuum carrying chamber TM through gate valves G1 and G2,respectively, and also designed to communicate with an atmospherecarrying chamber LM (which will be described later) through gate valvesG3 and G4, respectively. Accordingly, by opening the gate valves G3 andG4 with the gate valves G1 and G2 closed, the wafer W can be carriedbetween the vacuum lock chambers VL1 and VL2 and the atmosphere carryingchamber LM while the inside of the vacuum carrying chamber TM is kept ina vacuum-tight state.

Moreover, the vacuum lock chambers VL1 and VL2 are configured in a loadlock chamber structure which can withstand a negative pressure such as avacuum state lower than atmospheric pressure, and configured so thattheir insides can be vacuum-exhausted. Accordingly, by closing the gatevalves G3 and G4 to vacuum-exhaust the insides of the vacuum lockchambers VL1 and VL2 and then opening the gate valves G1 and G2, thewafer W can be carried between the vacuum lock chambers VL1 and VL2 andthe vacuum carrying chamber TM while the inside of the vacuum carryingchamber TM is kept in a vacuum state.

The cooling chambers CS1 and CS2 function to accommodate and cool thewafer W. The cooling chamber CS1 and CS2 are also configured so thattheir insides can be vacuum-exhausted. Also, gate valves are also fixedbetween the cooling chambers CS1 and CS2 and the vacuum carrying chamberTM, respectively.

(Configuration of Atmosphere Side)

On the other hand, on the atmosphere side of the cluster type substrateprocessing apparatus, the atmosphere carrying chamber LM as anatmosphere carrying chamber connected to the vacuum lock chambers VL1and VL2, and load ports LP1 to LP3 as a substrate holding unit connectedto the atmosphere carrying chamber LM are installed. Pods PD1 to PD3 assubstrate holding containers are provided on the load ports LP1 to LP3.At the insides of the pods PD1 to PD3, a plurality of slots are providedas holding units which accommodate the wafers W.

The atmosphere carrying chamber LM is provided with a clean air unit(not shown) which supplies clean air into the inside of the atmospherecarrying chamber LM.

The atmosphere carrying chamber LM is provided with one atmosphere robotAR as an atmosphere carrying mechanism. The atmosphere robot AR mutuallycarries the substrate such as the wafer W between the vacuum lockchambers VL1 and VL2 and the pods PD1 to PD3 loaded on the load portsLP1 to LP3. Like the vacuum robot VR, the atmosphere robot AR also hasan arm used as a substrate holding unit. Moreover, at a certain position(near the gate valve) in front of the atmosphere carrying chamber LM, awafer existence/nonexistence sensor (not shown) is fixed as a substratedetection unit which detects existence/nonexistence of the wafer W.

In addition, the atmosphere carrying chamber LM is provided with anorientation flat aligning device OFA which performs the positioning ofcrystal orientation in the wafer W as a substrate position correctingdevice.

(Configuration of Control Unit)

Each component section of the cluster type substrate processingapparatus is controlled by a control unit CNT. A configuration exampleof the control unit CNT is illustrated in FIG. 3. The control unit CNTincludes a comprehensive controller (CC) 90 as a comprehensive controlunit, a process module controller (PMC1) 91 as a process furnace controlunit, a process module controller (PMC2) 92 as a process furnace controlunit, and a first operation unit (OU) 100 operated by an operator.

The process module controllers (PMC1, PMC2) 91 and 92 are connected tothe process chambers PM1 and PM2 and designed to individually controlthe operations of the process chambers PM1 and PM2, respectively.Specifically, the process module controllers 91 and 92 are connected tothe MFCs 11, the APCs 12, the temperature regulators 13, theinput/output valve I/Os 14 and the like provided at the process chambersPM1 and PM2, respectively. The process module controllers 91 and 92 aredesigned to control each operation of the gas introduction/exhaustmechanism to/from the process chambers PM1 and PM2, the temperaturecontrol/plasma discharge mechanism, the cooling mechanism of the coolingchambers CS1 and CS2 and the like.

The comprehensive controller (CC) 90 is configured to be connectable tothe process module controllers 91 and 92 through a LAN line 80 anddesigned to comprehensively control the operations of the processchambers PM1 and PM2 through the process module controllers 91 and 92.In addition, the comprehensive controller 90 is connected to the vacuumrobot VR, the atmosphere robot AR, the gate valves G1 to G4, and thevacuum lock chambers VL1 and VL2, respectively. The comprehensivecontroller 90 is designed to control the operations of the vacuum robotVR and the atmosphere robot AR, the opening/closing operations of thegate valves G1 to G4, and the exhaust operations inside the vacuum lockchambers VL1 and VL2. Moreover, the comprehensive controller 90 isconnected to the above-described wafer existence/nonexistence sensors(not shown) and designed to create position information indicating theposition of the wafer W inside the substrate processing apparatus, basedon detection signals from the wafer existence/nonexistence sensors, andto update the position information as needed. The comprehensivecontroller 90 is designed to control the operations of the vacuum robotVR and the atmosphere robot AR used as the carrying unit and theoperations of the gate valves G1 to G4, based on a processing status ofthe wafer W, a wafer ID for identifying the wafer W, and data of arecipe performed on the wafer W, in addition to accommodatinginformation that designates which slot among the pods PD1 to PD3 thewafer W will be accommodated in and the position information.

The first operation unit (OU) 100 is configured to be connectable to thecomprehensive controller 90 and the process module controllers 91 and 92through the LAN line 80, respectively. The first operation unit 100 isconfigured as a general-purpose computer which is provided with a CPU, amemory, a communication interface, and a hard disk. The hard disk of thefirst operation unit 100 stores a comprehensive system control program,a PM1 operation program, a PM2 operation program and the like. Thecomprehensive system control program is read from the hard disk of thefirst operation unit 100 to the memory and is executed by the CPU toenable the first operation unit 100 to execute the function oftransmitting operation commands (messages) to the comprehensivecontroller 90 and the function of receiving operation reports (messages)from the comprehensive controller 90. Also, the PM1 operation programand the PM2 operation program are read from the hard disk of the firstoperation unit 100 to the memory and are executed by the CPU to enablethe first operation unit 100 to execute the function of transmittingoperation commands (messages) to the process module controllers 91 and92 through the comprehensive controller 90 and the function of receivingoperation reports (messages) from the process module controllers 91 and92 through the comprehensive controller 90. Moreover, the firstoperation unit 100 is designed to manage screen display/input receptionfunctions such as monitor display, logging data, alarm analyses, andparameter editions.

(2) Substrate Processing Process

Next, an example of the substrate processing process performed by thesubstrate processing apparatus in accordance with the embodiment of thepresent invention will be described with reference to FIG. 4 and FIG. 5.

FIG. 4 is a flowchart of a substrate processing process which isperformed by the substrate processing apparatus in accordance with anembodiment of the present invention. FIG. 5 is a schematic diagramillustrating an exemplary operation of the control unit in the substrateprocessing process in accordance with the embodiment of the presentinvention. In addition, dashed lines indicate transmission and receptionof messages within the substrate processing apparatus.

As illustrated in FIG. 4, an operation command M1 instructing to start asubstrate processing is transmitted from the first operation unit 100 tothe comprehensive controller 90 (S1).

The comprehensive controller 90 receiving the operation command M1vacuum-exhausts the insides of the vacuum carrying chamber TM, theprocess chambers PM1 and PM2, and the cooling chambers CS1 and CS2 byclosing the gate valves G1 and G4 and opening the gate valves G2 and G3.The comprehensive controller 90 supplies clean air into the atmospherecarrying chamber LM to get the atmosphere carrying chamber LM to almostthe atmospheric pressure. Then, the pod PD1 where a plurality ofunprocessed wafers W are held is loaded on the load port LP1 (S2).

Subsequently, the comprehensive controller 90 controls the atmosphererobot AR to carry the wafer W, which is held at a substrate position P1inside the pod PD1 loaded on the load port LP1, into the atmospherecarrying chamber LM, to place the wafer W at a substrate position P2 onthe orientation flat aligning device OFA, and to perform the positioningof crystal orientation (S3).

Subsequently, the comprehensive controller 90 controls the atmosphererobot AR to pick up the wafer W placed at the substrate position P2, tocarry the wafer W into the vacuum lock chamber VL1, and to place thewafer W at a substrate position P3 on the buffer stage ST1. Then, thecomprehensive controller 90 closes the gate valve G3 to vacuum-exhaustthe inside of the vacuum lock chamber VL1 (S4).

When the vacuum lock chamber VL1 is depressurized up to a predeterminedpressure, the comprehensive controller 90 opens the gate valve G1, withthe gate valve G3 closed. Then, the comprehensive controller 90 controlsthe vacuum robot VR to pick up the wafer W placed at the substrateposition P3, to carry the wafer W into the process chamber PM1, and toplace the wafer W at a substrate position P4 (S5).

When the wafer W is carried in the inside of the process chamber PM1,the comprehensive controller 90 transmits an operation command M2instructing to start a process of a substrate processing recipe throughthe LAN 80 to the process module controller 91 (S6).

The process module controller 91 performs a predetermined process (filmforming process and the like) on the wafer W by supplying a process gasinto the process chamber PM1 (S7).

When the processing on the wafer W is completed, the process modulecontroller 91 transmits an operation report M3 indicating the completionof the processing on the wafer W through the LAN 80 to the comprehensivecontroller 90 (S8).

The comprehensive controller 90 receiving the operation report M3controls the vacuum robot VR to pick up the processed wafer W placed atthe substrate position P4, to carry the processed wafer W into thecooling chamber CS1, and to place the process wafer W at a substrateposition P5 (S9).

When the cooling processing inside the cooling chamber CS1 is completed,the comprehensive controller 90 controls the vacuum robot VR to pick upthe processed wafer W placed at the substrate position P5, to carry theprocessed wafer W into the vacuum lock chamber VL2, and to place theprocessed wafer W at a substrate position P6 on the buffer stage ST2.Then, the comprehensive controller 90 closes the gate valve G2, suppliesclean air into the vacuum lock chamber VL2 to get the vacuum lockchamber VL2 back to almost the atmospheric pressure, and opens the gatevalve G4 (S10).

Subsequently, the comprehensive controller 90 controls the atmosphererobot AR to pick up the processed wafer W placed at the substrateposition P2, to carry the processed wafer W into the pod PD3 loaded onthe load port LP3, and to hold the processed wafer W into a vacant slot(S11).

After the above-described processes are repeated to perform automaticcarrying processing on all unprocessed wafers W, the comprehensivecontroller 90 unloads the pod PD3 accommodating the processed wafers Wfrom the load port LP3. Then, the comprehensive controller 90 transmitsan operation report M4 indicating the completion of the substrateprocessing instructed by the operator through the LAN 80 to the firstoperation unit 100, and finishes the substrate processing (S12).

In addition, in the above-described processes S1 to S12, monitor data oralarm (message M5) sent from the process module controllers 91 and 92 isdirectly transmitted to the first operation unit 100 without passingthrough the comprehensive controller 90.

(3) Setup Process

Next, a setup process to be performed upon the operation of theabove-described substrate processing apparatus will be described below.The setup process in accordance with the current embodiment includes aprocess furnace test process and a carrying test process.

(Process Furnace Test Process)

First, a process furnace test process will be described with referenceto FIG. 6, FIG. 7 and FIG. 11.

FIG. 6 is a flowchart of a process furnace test process which isperformed by the substrate processing apparatus in accordance with anembodiment of the present invention. FIG. 7 is a schematic diagramillustrating an exemplary operation of the control unit in the processfurnace test process in accordance with the embodiment of the presentinvention. FIG. 11 is a schematic diagram illustrating an exemplaryconfiguration of a program for a test terminal in accordance with anembodiment of the present invention.

First, by detaching the process module controllers 91 and 92 from theLAN 80, the process module controllers 91 and 92 are disconnected fromthe comprehensive controller 91 and the first operation unit 100. Then,a test terminal 201 is connected through the LAN 81 to the processmodule controller 91 and, at the same time, a test terminal 202 isconnected through the LAN 82 to the process module controller 92 (VS1).In addition, the first operation unit 100 is in such a state that it isconnected through the LAN 80 to the comprehensive controller program 90.The LANs 80, 81 and 82 are configured by different networks throughwhich mutual communication is impossible. Moreover, when the processmodule controllers 91 and 92 are disconnected from the comprehensivecontroller 90 and the first operation unit 100, it is preferable toensure the lock (interlock) in order to prevent abrupt operations of thegate valves or various mechanisms provided at the process chambers PM1and PM2.

In this case, each of the test terminals 201 and 202 is configured by ageneral-purpose computer which is provided with a CPU, a memory, acommunication interface, and a hard disk. For example, a notebookcomputer and the like may be suitably used. As illustrated in FIG. 11,each hard disk of the test terminals 201 and 202 stores a secondoperation unit program 100 a and a pseudo comprehensive controllerprogram 90 a. Here, the second operation unit program is, for example, acopy of a PM1 operation program (or a PM2 operation program). The secondoperation unit program 100 a and the pseudo comprehensive controllerprogram 90 a are read from the hard disk to the memory and are executedby the CPU to implement a second operation unit 100 v and a pseudocomprehensive controller 90 v as a pseudo comprehensive control unit inthe test terminals 201 and 202. The second operation unit 100 v has thesame functions (above-described functions) as those implemented in thefirst operation unit 100 by the comprehensive system control program andthe PM1 and PM2 operation programs. Also, the pseudo comprehensivecontroller 90 v has the same functions (above-described functions) asthose of the comprehensive controller 90. That is, the second operationunit 100 v and the pseudo comprehensive controller 90 v almostcompletely simulate the first operation unit 100 and the comprehensivecontroller 90, respectively, and the process module controllers 91 and92 are configured to be in such a state that they are connected to thefirst operation unit 100 and the comprehensive controller 90, withoutany modification of their program or and the like. Herein, explanationwill be given on a flow of a command and its response among the secondoperation unit 100 v, the pseudo comprehensive controller 90 v, and theprocess module controller 91. First, a command to the process modulecontroller 91 is transmitted from the second operation unit 100 v to theprocess module controller 91 through the pseudo comprehensive controller90 v, and a response to the command is transmitted in a reverse manner,that is, from the process module controller 91 to the second operationunit 100 v through the pseudo comprehensive controller 90 v. That is,the pseudo comprehensive controller 90 v manages the process modulecontroller 91 with respect to the command and its response. Meanwhile,the second operation unit 100 v communicates the command and itsresponse with the pseudo comprehensive controller 90 v, and directlycommunicates the others such as monitor data or downloaded data with theprocess module controller 91. Therefore, in addition to the secondoperation unit 100 v, the pseudo comprehensive controller 90 v isincorporated in the test terminal 201. Also, in order to enable theexecution of a program used for the first operation unit 100 or a copyof the program in the test terminal 201 in such a controllerconfiguration, as described above, the process module controller 91 and92 are made to be a state as if they are connected to the firstoperation unit 100 and the comprehensive controller 90, respectively,without any modification of the program and the like.

Then, a process furnace test operation command VM1 is transmitted fromthe second operation unit 100 v of the test terminal 201 to the processmodule controller 91 through the pseudo comprehensive controller 90 v.Also, a process furnace test operation command VM1 is transmitted fromthe second operation unit 100 v of the test terminal 202 to the processmodule controller 92 through the pseudo comprehensive controller 90 v ofthe test terminal 202 (VS2, VS3).

That is, the process furnace test operation command VM1 instructing tostart the setup process is transmitted from the second operation unit100 v of the test terminal 201 to the pseudo comprehensive controller 90v of the test terminal 201 by using the inter-process (inter-program)communication or the like (VS2). Then, the process furnace testoperation command VM2 instructing to start the operation test of theprocess chamber PM1 is transmitted from the pseudo comprehensivecontroller 90 v of the test terminal 201 to the process modulecontroller 91 through the LAN 81 (VS3). Also, in the similar manner, theprocess furnace test operation command VM1 instructing to start thesetup process is transmitted from the second operation unit 100 v of thetest terminal 202 to the pseudo comprehensive controller 90 v of thetest terminal 202 (VS2). Then, the process furnace test operationcommand VM2 instructing to start the operation test of the processchamber PM2 is transmitted from the pseudo comprehensive controller 90 vof the test terminal 202 to the process module controller 92 through theLAN 82 (VS3).

The process module controllers 91 and 92 receiving the process furnacetest operation command VM2 perform “input/output valve I/O check”,“interlock check”, “chamber vacuum check” and the like on the processchambers PM1 and PM2 (VS4). Various checks on the process chambers PM1and PM2 are performed in parallel. Here, in the “input/output valvecheck” process, the valve button on the screen is pressed and it ischecked whether the corresponding valve is actually opened or closed(whether the interconnection is correct), and it is also checked whetherthe opened or closed display is correct. These checks are performed asmany times as a predetermined number of the valves. In the “interlockcheck” process, it is checked with respect to the valves whether thevalve interlock operates normally or not. For example, the valveinterlock previously set in the individual valves is generated, and theoutput of an alarm message on the screen is checked. With regard to theother hard interlock, the hard interlock is pseudo generated in the samemanner as the above and then sequentially checked. The “chamber vacuumcheck” process is to check the leak of the chamber by creating andexecuting a recipe (leak check recipe) of depressurizing the chamber toa specific pressure. In the “chamber vacuum check,” the assemblyaccuracy and the exhaust ability are checked. For example, the followingprocesses are performed: 1. The leak check recipe is executed todepressurize the process chambers PM1 and PM2 by the pump closing thedesignated valve and to check the arrival pressure. 2. When the arrivalpressure is OK, the valve between the pump and the chamber is closed andthe process chambers PM1 and PM2 are sealed in vacuum. 3. After adesignated time passes by, the leak amount is automatically calculatedand it is checked whether the leak amount is OK or NG. In addition,temperature, plasma or the like, which is unique to the process chambersPM1 and PM2, is checked. Since the interlock check is related when theleak amount is NG, the “chamber vacuum check” may be considered as akind of “interlock check” in some cases.

When those checks are completed, a process furnace test operation reportVM3 is transmitted from the process module controller 91 to the secondoperation unit 100 v of the test terminal 201 through the pseudocomprehensive controller 90 v of the test terminal 201. Also, theprocess furnace test operation report VM3 is transmitted from theprocess module controller 92 to the second operation unit 100 vimplemented in the test terminal 202 through the pseudo comprehensivecontroller 90 v of the test terminal 202, and the process furnace testprocess is finished (VS5).

That is, the process furnace test operation report VM4 is transmittedfrom the process module controller 91 to the pseudo comprehensivecontroller 90 v of the test terminal 201 through the LAN 81. Then, aprocess furnace test operation report VM5 is transmitted from the pseudocomprehensive controller 90 v of the test terminal 201 to the secondoperation unit 100 v of the test terminal 201 by using the inter-process(inter-program) communication or the like. In the similar manner, theprocess furnace test operation report VM4 is transmitted from theprocess module controller 92 to the pseudo comprehensive controller 90 vof the test terminal 202 through the LAN 82. Then, the process furnacetest operation report VM5 is transmitted from the pseudo comprehensivecontroller 90 v of the test terminal 202 to the second operation unit100 v of the test terminal 202 by using the inter-process(inter-program) communication or the like.

In addition, as described above, since the first operation unit 100 isin such a state that it is connected through the LAN 80 to thecomprehensive controller program 90, it is preferable that, when theprocess furnace test processes VS1 to VS5 are performed, the testoperation command is transmitted from the first operation unit 100 tothe comprehensive controller 90, and valve check (open/close check ofthe gate valves G1 to G4), interlock check (depressurization check ofthe vacuum lock chambers VL1 and VL2), and chamber vacuum check(depressurization check of the vacuum carrying chamber TM, the coolingchambers CS1 and CS2, and the like) are performed in parallel.

(Carrying Test Process)

Subsequently, a carrying test process to be performed after the processfurnace test process will be described with reference to FIG. 8 and FIG.9.

FIG. 8 is a flowchart of a carrying test process which is performed inthe substrate processing apparatus in accordance with an embodiment ofthe present invention. FIG. 9 is a schematic diagram illustrating anexemplary operation of the control unit in the carrying test process inaccordance with the embodiment of the present invention.

First, by detaching the test terminals 201 and 202 from the LANs 81 and82, the test terminals 201 and 202 are disconnected from the processmodule controllers 91 and 92, respectively. Then, by connecting theprocess module controllers 91 and 92 to the LAN 80, the process modulecontrollers 91 and 92, the first operation unit 100 and thecomprehensive controller 90 are connected together (TS1).

Then, a carrying test operation command TM1 instructing to start a testcarrying is transmitted from the first operation unit 100 to thecomprehensive controller 90 through the LAN 80 (TS2).

The comprehensive controller 90 receiving the carrying test operationcommand TM2 vacuum-exhausts the insides of the vacuum carrying chamberTM, the process chambers PM1 and PM2, and the cooling chambers CS1 andCS2 by closing the gate valves G1 and G4 and opening the gate valves G2and G3. The comprehensive controller 90 supplies clean air into theatmosphere carrying chamber LM to get the atmosphere carrying chamber LMto almost the atmospheric pressure. Then, the comprehensive controller90 loads the pod PD1 accommodating a plurality of unprocessed wafers Won the load port LP1 (TS3).

Subsequently, the comprehensive controller 90 controls the atmosphererobot AR to carry the wafer W, which is accommodated at the substrateposition P1 inside the pod PD1 loaded on the load port LP1, into theatmosphere carrying chamber LM, to place the wafer W at the substrateposition P2 on the orientation flat aligning device OFA, and to performthe positioning of crystal orientation (TS4).

Subsequently, the comprehensive controller 90 controls the atmosphererobot AR to pick up the wafer W placed at the substrate position P2, tocarry the wafer W into the vacuum lock chamber VL1, and to place thewafer W at the substrate position P3 on the buffer stage ST1. Then, thecomprehensive controller 90 closes the gate valve G3 to vacuum-exhaustthe inside of the vacuum lock chamber VL1 (TS5).

When the vacuum lock chamber VL1 is depressurized up to a predeterminedpressure, the comprehensive controller 90 opens the gate valve G1 whilethe gate valve G3 is closed. Then, the comprehensive controller 90controls the vacuum robot VR to pick up the wafer W placed at thesubstrate position P3, to carry the wafer W into the process chambersPM1 and PM2, and to place the wafer W at the substrate position P4(TS6).

When the carrying of the wafer W into the process chambers PM1 and PM2is completed, the comprehensive controller 90 controls the vacuum robotVR to pick up the wafer W placed at the substrate position P4, to carrythe wafer W into the cooling chamber CS1, and to place the wafer W atthe substrate position P5 (TS7).

When the carrying of the wafer W into the cooling chamber CS1 iscompleted, the comprehensive controller 90 controls the vacuum robot VRto pick up the processed wafer W placed at the substrate position P5, tocarry the processed wafer W into the vacuum lock chamber VL2, and placethe processed wafer W at a substrate position P6 on the buffer stageST2. Then, the comprehensive controller 90 closes the gate valve G2,supplies clean air into the vacuum lock chamber VL2 to get the vacuumlock chamber VL2 back to almost the atmospheric pressure, and opens thegate valve G4 (TS8).

Subsequently, the comprehensive controller 90 controls the atmosphererobot AR to pick up the wafer W placed at the substrate position P2, tocarry the wafer W into the pod PD3 loaded on the load port LP3, and tohold the wafer W into a vacant slot (TS9).

After the above-described processes are repeated to perform automaticcarrying processing on all wafers W, the comprehensive controller 90unloads the pod PD3 accommodating the wafers W from the load port LP3.Then, the comprehensive controller 90 transmits a carrying testoperation report (message) TM2 indicating the completion of the carryingtest through the LAN 80 to the first operation unit 100, and finishesthe carrying test process.

(Specific Embodiment)

When the setup of the process chamber PM1 is performed individually andseparately, the test terminal 201 having the functions of the secondoperation unit 100 v and the pseudo comprehensive controller 90 v isprepared and connected to the process module controller 91. Then, the“input/output valve I/O check” and so on are performed through theoperation of the test terminal 201. Also, the leak check recipe fordepressurizing the inside of the process chamber PM1 to a specificpressure is executed. First, a specific execution command is transmittedfrom the second operation unit 100 v through the pseudo comprehensivecontroller 90 v to the process module controller 91. Upon reception ofthe execution command, the process module controller 91 requests recipedata to the second operation unit 100 v. Upon reception of the request,the second operation unit 100 v downloads the recipe data, which isnecessary to execute the execution command, in the process modulecontroller 91. When the download is completed, the process modulecontroller 91 executes the process recipe by using the recipe data. Inthis way, the “chamber vacuum check” is performed by executing the leakcheck recipe. In the same manner, the first operation unit 100 and thecomprehensive controller 90 are connected to the vacuum carrying chamberTM after separating the process chamber PM1 individually. At the vacuumtransfer chamber TM, the leak check recipe for executing the “chambervacuum check” is executed. First, a specific execution command istransmitted from the first operation unit 100 to the comprehensivecontroller 90. Upon reception of the execution command, thecomprehensive controller 90 requests recipe data to the first operationunit 100. Upon reception of the request, the first operation unit 100downloads the recipe data, which is necessary to execute the executioncommand, in the comprehensive controller 90. When the download iscompleted, the comprehensive controller 90 executes the leak checkrecipe by using the recipe data. The execution of the leak check recipefor the process chamber PM1 and the execution of the leak check recipefor the vacuum transfer chamber TM may be performed in parallel.

(4) Effects of the Current Embodiment

The current embodiment obtains one or more of the following effects.

(a) In the process furnace test process in accordance with the currentembodiment, the test terminal 201 is connected to the process modulecontroller 91 through the LAN 81 and the test terminal 202 is connectedto the process module controller 92 through the LAN 82 (VS1). Theprocess furnace test operation command VM1 is transmitted from thesecond operation unit 100 v of the test terminal 201 to the processmodule controller 91 through the pseudo comprehensive controller 90 v ofthe test terminal 201. Also, the process furnace test operation commandVM1 is transmitted from the second operation unit 100 v of the testterminal 202 to the process module controller 92 through the pseudocomprehensive controller 90 v of the test terminal 202 (VS2, VS3). Theprocess module controllers 91 and 92 receiving the process furnace testoperation command VM2 perform “input/output valve I/O check”, “interlockcheck”, “chamber vacuum check” and the like on the process chambers PM1and PM2 (VS4). As a result, since various checks on the process chambersPM1 and PM2 are performed in parallel, the time necessary for the setupprocess is reduced and therefore the operation of the substrateprocessing apparatus is promptly started.

FIG. 12 is a table diagram showing an example of an operation scheduleof the conventional setup process. Also, FIG. 13 is a table diagramshowing an example of an operation schedule of the setup process inaccordance with an embodiment of the present invention. Referring toFIG. 12, since the normality check of the process chambers PM1 and PM2is sequentially performed by using one first operation unit 100, it isdifficult to reduce the setup process. On the contrary, referring toFIG. 13, since the normality check of the process chambers PM1 and PM2(process furnace test process) is performed in parallel by using thetest terminals 201 and 202, the time necessary for the setup process isreduced and therefore the operation of the substrate processingapparatus is promptly started. PF in FIG. 12 and FIG. 13 denote thetransfer chamber (generic term of the vacuum carrying chamber TM and theatmosphere carrying chamber LM).

(b) In the process furnace test process in accordance with the currentembodiment, the first operation unit 100 is in such a state that it isconnected through the LAN 80 to the comprehensive controller program 90.Thus, when the process furnace test processes VS1 to VS5 are performed,the test operation command is transmitted from the first operation unit100 to the comprehensive controller 90, and valve check (open/closecheck of the gate valves G1 to G4), interlock check (depressurizationcheck of the vacuum lock chambers VL1 and VL2), and chamber vacuum check(depressurization check of the vacuum carrying chamber TM, the coolingchambers CS1 and CS2, and the like) are performed in parallel. As aresult, as illustrated in FIG. 13, the time necessary for the setupprocess is further reduced and therefore the operation of the substrateprocessing apparatus is more promptly started. That is, the processchambers PM1 and PM2 (respective process chambers) and the vacuumcarrying chambers TM (transfer chambers) are separated, and the testterminals 201 and 202 are connected to the process chambers PM1 and PM2,respectively. Since the executions of the recipes for each processchamber and each carrying chamber are performed in parallel, the timenecessary for the setup process is reduced.

(c) In the setup process in accordance with the current embodiment, theprograms of the process module controllers 91 and 92 are not thededicated test programs for executing the setup process, but the actualprograms performed after the start of the operation. Hence, by executingthe setup process in accordance with the current embodiment, it ispossible to check whether problems arise when the actual programs areexecuted.

In addition, as described above, there may be proposed a method whichinstalls a test program dedicated to the setup process into the processmodule controllers 91 and 92 and makes the process module controllers 91and 92 execute the setup process in parallel. However, since the actualprogram used after the start of the operation and the test program aredifferent, it is difficult to check whether problems arise when theactual program is executed. For example, as illustrated in FIG. 10,there may be proposed another method which separates only the PM1operation program 201 a among the programs 100 a provided in the firstoperation unit 100, installs it into the process module controller 91,and performs the setup process by executing the PM1 operation program201 a. However, such a method has the above-described problem thatcannot check the operation performed by the actual program, and also anew problem that generates a bug during the test the PM1 operationprogram 201 a creating the PM1 operation program 201 a separated alone,or causes a need to re-create the test program when the program of thefirst operation unit 100 is revised.

(d) In the current embodiment, the process furnace test process, thecarrying test process, and the substrate processing process can beperformed through modifications of the first operation unit 100, theprocess module controllers 91 and 92, the comprehensive controller 90,and the LAN line between the test terminals 201 and 202. That is, whenthe process furnace test process, the carrying test process, and thesubstrate processing process are performed in sequence, the timenecessary for the setup process is further reduced and the operation ofthe substrate processing apparatus is further promptly started becausethe configuration of the substrate processing apparatus except the LANline is not modified.

(e) Since the test terminals 201 and 202 are configured as ageneral-purpose computer which is provided with a CPU, a memory, acommunication interface, and a hard disk, a notebook computer may besuitably used. Hence, in addition to the above-described setup process,the test terminals 201 and 202 may be used to acquire various data ofthe substrate processing apparatus, or create backup data of varioussetup data, or store drawing data referenced in operations, which willincrease convenience of the operator. Furthermore, the setup inaccordance with the current embodiment is a preparatory work beforestarting the operation of the substrate processing apparatus, andincludes a processing preparation process after maintenance, as well asthe setup when a device is loaded.

<Another Exemplary Embodiment of the Present Invention>

Subsequently, the configuration of the substrate processing apparatus inaccordance with another embodiment of the present invention isillustrated in FIG. 2. FIG. 2 is a schematic configuration diagram of anin-line type substrate processing apparatus in accordance with anotherembodiment of the present invention. The in-line type substrateprocessing apparatus is also divided into a vacuum side and anatmosphere side.

(Configuration of Vacuum Side)

On the vacuum side of the in-line type substrate processing apparatus,two substrate process modules MD1 and MD2 are installed in parallel. Thesubstrate process module MD1 is provided with a process chamber PM1 as aprocess furnace having a processing chamber which processes a substratesuch as a wafer W, and a vacuum lock chamber VL1 as a preliminarychamber installed in a front stage. Like the substrate process moduleMD1, the substrate process module MD2 is provided with a process chamberPM2 and a vacuum lock chamber VL2.

Like the case of the cluster type substrate processing apparatus, theprocess chambers PM1 and PM2 are configured to give an added value tothe wafer W, for example, by performing a process of forming a thin filmon the wafer W by a CVD method or a PVD method, a process of forming anoxide film or a nitride film on the surface of the wafer W, or a processof forming a metal thin film on the wafer W. The process chambers PM1and PM2 are provided with a gas introduction/exhaust mechanism, atemperature control/plasma discharge mechanism, MFCs 11 which control aflow rate of a process gas supplied into the process chambers PM1 andPM2, automatic pressure controllers (APC) 12 which control pressureinside the process chambers PM1 and PM2, temperature regulators 13 whichcontrol temperature inside the process chambers PM1 and PM2, andinput/output valve I/Os 14 which control on/off of a process gas supplyor exhaust. While exhausting the insides of the process chambers PM1 andPM2 by the gas exhaust mechanism and supplying the process gas into theprocess chambers PM1 and PM2 by the gas introduction mechanism at thesame time, high-frequency power is supplied to the process chambers PM1and PM2 to generate plasma inside the process chambers PM1 and PM2, andthe surface of the wafer W is processed.

The vacuum lock chambers VL1 and VL2 function as preliminary chamberswhich load the wafer W into the process chambers PM1 and PM2, or aspreliminary chambers which unload the wafer W from the process chambersPM1 and PM2.

At the vacuum lock chambers VL1 and VL2, vacuum robots VR1 and VR2 areinstalled as a vacuum carrying mechanism. The vacuum robots VR1 and VR2can carry the wafer W between the process chamber PM1 and vacuum lockchamber VL1 and between the process chamber PM2 and the vacuum lockchamber VL2. The vacuum robots VR1 and VR2 are provided with an arm as asubstrate loading unit.

In addition, the vacuum lock chambers VL1 and VL2 are provided with amulti-stepped stage which can hold the wafer W, for example, anupper/lower two-stepped stage. Upper-stepped buffer stages LS1 and LS2are provided with a mechanism which holds the wafer W, and lower-steppedcooling stages CS1 and CS2 are provided with a mechanism which cools thewafer W.

The vacuum lock chambers VL1 and VL2 are configured to communicate withthe process chambers PM1 and PM2, respectively, and also configured tocommunicate with an atmosphere carrying chamber LM (which will bedescribed later) through gate valves G3 and G4, respectively.Accordingly, by opening the gate valves G1 and G2 with the gate valvesG3 and G4 closed, the wafer W can be carried between the vacuum lockchamber VL1 and the process chamber PM1 and between the vacuum lockchamber VL2 and the process chamber PM2 while the inside of the processchambers PM1 and PM2 are kept in a vacuum-tight state.

Moreover, the vacuum lock chambers VL1 and VL2 are configured in a loadlock chamber structure which can withstand a negative pressure such as avacuum state lower than atmospheric pressure, and configured so thattheir insides can be vacuum-exhausted. Accordingly, by closing the gatevalves G1 and G2 to supply clean air into the vacuum lock chambers VL1and VL2 and then opening the gate valves G3 and G4, the wafer W can becarried between the vacuum lock chambers VL1 and VL2 and the atmospherecarrying chamber LM.

(Configuration of Atmosphere Side)

As described above, the atmosphere side of the in-line type substrateprocessing apparatus is provided with the atmosphere carrying chamber LMconnected to the vacuum lock chambers VL1 and VL2, and load ports LP1and LP2 as a substrate accommodating unit which loads the substrateaccommodating containers (hereinafter, referred to as pods PD1 and PD2)connected to the atmosphere carrying chamber LM.

At the atmosphere carrying chamber LM, an atmosphere robot AR isinstalled so that the wafer W can be carried between the vacuum lockchambers VL1 and VL2 and the load ports LP1 and LP2. In addition, theatmosphere robot AR is provided with an arm as a substrate loading unit.

Moreover, the atmosphere carrying chamber LM is provide with an alignerunit AU as a substrate position correcting device which corrects adeviation of the wafer W at the time of carrying the wafer W and performnotch-alignment to align the notch of the wafer W in a certaindirection.

The load ports LP1 and LP2 can load the pods PD1 and PD2 whichaccommodate a plurality of wafers W, respectively.

(Configuration of the Others)

Since the configuration of the others including the control unit, thesubstrate processing process, the process furnace test process, and thecarrying test process are substantially identical to the above-describedembodiments, their duplicate description will be omitted.

<Another Exemplary Embodiment>

While it has been described above that the wafer W is individuallycarried into the process chambers PM1 and PM2 by the atmosphere robot ARand the vacuum robot VR as the carrying mechanism, the present inventionis not limited to such a configuration. For example, a boat as asubstrate holder which holds a plurality of wafers W at a horizontalposition in a multiple stage may be carried into the insides of theprocess chambers PM1 and PM2. Then, the process chambers PM1 and PM2 areregulated to a certain temperature and a certain pressure, a substrateheld by the boat is processed by supplying a process gas into theprocess chamber. The boat holding the processed wafer is carried out ofthe process chamber. In this way, the wafer W is processed. Furthermore,explanation have been given on the embodiment in which the setup of theprocess chambers PM1 and PM2 (process chambers) and the vacuum carryingchambers TM (carrying chambers) is performed in parallel by usingseveral test terminals 201 and 202, or the embodiment in which the setupof the process chambers PM1 and PM2 (process chambers) and the vacuumlock chambers VL (carrying chambers) is performed in parallel, but thepresent invention is not limited to those embodiments. For example, onlyone test terminal may be installed, and programs for a plurality ofprocess chambers may be executed at the same time. In addition, it ispreferable that the first operation unit 100 is configured to have thefunction of the pseudo comprehensive controller 90 v. In this case, apredetermined number of test terminals may be connected, and the testterminals having the same function as the first operation unit havingthe function of the pseudo comprehensive controller 90 v may beinstalled through a simple method such as a download or a copy.Furthermore, the separation work of the process chambers and the likemay be executed, and the parallel setup work may be executed by the testterminal. Moreover, when the process chambers and so on are separatedand executed in parallel, without using the test terminals, it isnecessary to execute the programs for the process chambers or thecarrying chambers at the same time. For example, it is necessary toexecute a plurality of CPUs individually in order that programs areexecuted at the same time with respect to a plurality of processchambers or one or more process chambers and carrying chambers.

While the semiconductor manufacturing apparatus has been described aboveas one example of the substrate processing apparatus, the presentinvention is not limited to the semiconductor manufacturing apparatus,but may include an apparatus for processing a glass substrate such as anLCD device. Any detailed contents of the substrate processing areavailable, and a film-forming process, an annealing process, anoxidation process, a nitridation process, and a diffusion process mayalso be available. Furthermore, the film-forming process may include aCVD, a PVD, a process of forming an oxide film and a nitride film, and aprocess of forming a metal-containing film.

<Preferred Embodiment of the Present Invention>

Hereinafter, preferred embodiments of the present invention will becomplementarily described.

In a first embodiment of the present invention, there is provided asetup method of a substrate processing apparatus, a plurality of processfurnaces each including a process chamber which processes a substrate; aplurality of process furnace control units connected to the plurality ofprocess furnaces to individually control operations of the plurality ofprocess furnaces, respectively; a comprehensive control unit configuredto be connectable to the plurality of process furnace control units tocomprehensively control the operations of the plurality of processfurnaces through the plurality of process furnace control units,respectively; and a first operation unit configured to be connectable tothe comprehensive control unit and the plurality of process furnacecontrol units to transmit an operation command to the plurality ofprocess furnace control units through the comprehensive control unit andto receive an operation report from the plurality of process furnacecontrol units through the comprehensive control unit. The setup methodof a substrate processing apparatus comprises a process furnace testprocess which comprises: connecting a test terminal, which includes apseudo comprehensive control unit and a second operation unit, to theplurality of process furnace control units, with the plurality ofprocess furnace control units being disconnected from the comprehensivecontrol unit and the first operation unit; transmitting a processfurnace test operation command from the second operation unit to theplurality of process furnace control units through the pseudocomprehensive control unit; testing the operations of the plurality ofprocess furnaces in parallel by the plurality of process furnace controlunits receiving the process furnace test operation command; andtransmitting a process furnace test operation report from the pluralityof process furnace control units to the second operation unit throughthe pseudo comprehensive control unit.

In a second embodiment of the present invention, there is provided thesetup method of a substrate processing apparatus in accordance with thefirst embodiment, further including: a carrying chamber connected tocommunicate with the plurality of process chambers; and a carryingmechanism configured to carry a substrate between the process chamberand the carrying chamber, wherein the comprehensive control unit isconnected to the carrying mechanism to control a carrying operation ofthe carrying mechanism. The setup method of a substrate processingapparatus in accordance with the second embodiment of the presentinvention further comprises a carrying test process which comprises:after the process furnace test process, connecting the first operationunit to the comprehensive control unit and the plurality of processfurnace control units, with the test terminal being disconnected fromthe plurality of process furnace control units; transmitting a carryingtest operation command from the first operation unit to thecomprehensive control unit; communicating the process chamber with thecarrying chamber and testing an operation of the carrying mechanism bythe comprehensive control unit receiving the carrying test operationcommand; and transmitting a carrying test operation report from thecomprehensive control unit to the first operation unit.

In a third embodiment of the present invention, there is provided themethod for manufacturing the semiconductor device in accordance with thefirst or second embodiment, which is performed by the substrateprocessing apparatus, the method further comprising a substrateprocessing process which comprises supplying a process gas into theprocess chamber where the substrate is carried, and generating plasma inthe inside of the process chamber by using high-frequency power, wherebythe surface of the substrate is processed.

In a fourth embodiment of the present invention, there is provided themethod for manufacturing the semiconductor device in accordance with thefirst or second embodiment, which is performed by the substrateprocessing apparatus, the method further comprising: carrying asubstrate holder holding a plurality of substrates at a horizontalposition in a multiple stage into the process chamber; regulating theinside of the process chamber to a certain temperature and a certainpressure; processing the substrates by supplying the process gas intothe process chamber; and carrying the substrate holder holding theprocessed substrates out of the process chamber.

In a fifth embodiment of the present invention, there is provided asetup method, which is performed by a cluster type substrate processingapparatus including: a plurality of process furnaces each including aprocess chamber which processes a substrate; a vacuum carrying chamberconnected to communicate with the plurality of process chambers; adepressurizable preliminary chamber connected to communicate with thevacuum carrying chamber; an atmosphere carrying chamber connected tocommunicate with the preliminary chamber and into which the substrate iscarried in an atmospheric pressure state; a substrate accommodating unitconnected to communicate with the atmosphere carrying chamber toaccommodate a plurality of substrates; a vacuum carrying mechanisminstalled inside the vacuum carrying chamber to carry the substratebetween the process chamber and the preliminary chamber; an atmospherecarrying mechanism installed inside the atmosphere carrying chamber tocarry the substrate between the preliminary chamber and the substrateaccommodating unit; a plurality of process furnace control unitsconnected to the plurality of process furnaces to individually controloperations of the process furnaces, respectively; a comprehensivecontrol unit configured to be connectable to the plurality of processfurnace control units to comprehensively control the operations of theplurality of process furnaces through the plurality of process furnacecontrol units, and connected to the vacuum carrying mechanism and theatmosphere carrying mechanism to control carrying operations of thevacuum carrying mechanism and the atmosphere carrying mechanism,respectively; and a first operation unit configured to be connectable tothe comprehensive control unit and the plurality of process furnacecontrol units to transmit an operation command to the plurality ofprocess furnace control units through the comprehensive control unit andto receive an operation report from the plurality of process furnacecontrol units through the comprehensive control unit. The method formanufacturing the semiconductor device in accordance with the fifthembodiment comprises a process furnace test process, which comprises:connecting a test terminal, which includes a pseudo comprehensivecontrol unit and a second operation unit, to the plurality of processfurnace control units, with the plurality of process furnace controlunits being disconnected from the comprehensive control unit and thefirst operation unit; transmitting a process furnace test operationcommand from the second operation unit to the plurality of processfurnace control units through the pseudo comprehensive control unit;testing the operations of the plurality of process furnaces in parallelby the plurality of process furnace control units receiving the processfurnace test operation command; and transmitting a process furnaceoperation report from the plurality of process furnace control units tothe second operation unit through the pseudo comprehensive control unit.

In a sixth embodiment, there is provided a setup method, which isperformed by an in-line type substrate processing apparatus including:an atmosphere carrying chamber; a plurality of depressurizablepreliminary chambers connected in parallel to communicate with one sideof the atmosphere carrying chamber; a plurality of process furnaces eachconnected to communicate with the preliminary chambers and including aprocess chamber which processes a substrate; a substrate accommodatingunit connected in parallel to communicate with the other side of theatmosphere carrying chamber to hold a substrate accommodating containerwhich accommodates a plurality of substrates; a vacuum carryingmechanism installed inside the preliminary chamber to carry thesubstrate between the process chamber and the preliminary chamber; anatmosphere carrying mechanism installed inside the atmosphere carryingchamber to carry the substrate between the preliminary chamber and thesubstrate accommodating unit; a plurality of process furnace controlunits connected to the plurality of process furnaces to individuallycontrol operations of the process furnaces, respectively; acomprehensive control unit configured to be connectable to the pluralityof process furnace control units to comprehensively control theoperations of the plurality of process furnaces through the plurality ofprocess furnace control units, and connected to the vacuum carryingmechanism and the atmosphere carrying mechanism to control carryingoperations of the vacuum carrying mechanism and the atmosphere carryingmechanism, respectively; and a first operation unit configured to beconnectable to the comprehensive control unit and the plurality ofprocess furnace control units to transmit an operation command to theplurality of process furnace control units through the comprehensivecontrol unit and to receive an operation report from the plurality ofprocess furnace control units through the comprehensive control unit.The setup method of the substrate processing apparatus in accordancewith the sixth embodiment comprises a process furnace test process,which comprises: connecting a test terminal, which includes a pseudocomprehensive control unit and a second operation unit, to the pluralityof process furnace control units, with the plurality of process furnacecontrol units being disconnected from the comprehensive control unit andthe first operation unit; transmitting a process furnace test operationcommand from the second operation unit to the plurality of processfurnace control units through the pseudo comprehensive control unit;testing the operations of the plurality of process furnaces in parallelby the plurality of process furnace control units receiving the processfurnace test operation command; and transmitting a process furnaceoperation report from the plurality of process furnace control units tothe second operation unit through the pseudo comprehensive control unit.

In a seventh embodiment, the method for manufacturing the semiconductordevice in accordance with any one of the first to sixth embodiments,which is performed by the substrate processing apparatus, furthercomprises a process of supplying a process gas into the process chamberwhere the substrate is carried, and forming a thin film on a substrateby a CVD method or a PVD method, or a process of forming an oxide filmor a nitride film on the surface of the substrate, or a process offorming a metal thin film on the substrate of the substrate.

1. A setup system at least comprising: a substrate processing apparatus including: a plurality of process chambers configured to process substrates; a plurality of process chamber control units configured to individually control operations of the plurality of process chambers; a comprehensive control unit configured to comprehensively control the operations of the plurality of process chambers through the plurality of process chamber control units; and an operation unit configured to receive an operation report from the plurality of process chamber control units through the comprehensive control unit; and a test terminal including a test terminal program, the test terminal being connected to the plurality of process chamber control units with the comprehensive control unit and the operation unit being disconnected from the plurality of process chamber control units, wherein the test terminal transmits a process chamber test operation command to the plurality of process chamber control units by executing the test terminal program, and wherein the plurality of process chamber control units individually test the operations of the plurality of process chambers according to the process chamber test operation command received from the test terminal, and transmit process chamber test operation reports to the test terminal.
 2. A setup system at least comprising: a substrate processing apparatus including: a plurality of process chambers configured to process substrates; a plurality of process chamber control units configured to individually control operations of the plurality of process chambers; a comprehensive control unit configured to comprehensively control the operations of the plurality of process chambers through the plurality of process chamber control units; a first operation unit configured to receive operation reports from the plurality of process chamber control units through the comprehensive control unit; and a test terminal executing a test terminal program, the test terminal being connected to the plurality of process chamber control units with the comprehensive control unit and the first operation unit being disconnected from the plurality of process chamber control units, the test terminal comprising a pseudo comprehensive control unit configured to comprehensively control the operations of the plurality of process chambers through the process chamber control units; and a second operation unit configured to receive process chamber test operation reports from the process chamber control units through the pseudo comprehensive control unit, wherein the second operation unit transmits a process chamber test operation command to the plurality of process chamber control units through the pseudo comprehensive control unit, and receives through the pseudo comprehensive control unit the process chamber test operation reports obtained by individually testing the operations of the plurality of process chambers by the plurality of process chamber control units according to the process chamber test operation command received from the pseudo comprehensive control unit.
 3. The setup system of claim 2, wherein the substrate processing apparatus further comprises: a carrying chamber communicating with each of the plurality of process chambers; and a carrying mechanism configured to carry the substrates between the plurality of process chambers and the carrying chamber, wherein the first operation unit connected to the comprehensive control unit and the plurality of process chamber control units transmits a carrying test operation command to the comprehensive control unit with the test terminal being disconnected from the plurality of process chamber control units, and wherein the comprehensive control unit controls a carrying operation of the carrying mechanism by communicating the plurality of process chambers with the carrying chamber, tests the carrying operation of the carrying mechanism, and transmits a carrying test operation report to the first operation unit according to the carrying test operation command received from the test terminal.
 4. The setup system of one of claims 1 and 2, wherein the test terminal program performs a process chamber test operation including at least one of: an input/output check process wherein an operation check of at least one input/output valve included in the substrate processing apparatus is performed; an interlock check process wherein a depressurization operation check of interiors of the plurality of process chambers included in the substrate processing apparatus is performed; and a robot teaching process wherein a carrying operation check of the carrying mechanism included in the substrate processing apparatus is performed.
 5. The setup system of one of claims 1 and 2, wherein a plurality of the test terminal is provided, and each of the plurality of the test terminal executes the test terminal program to concurrently perform a process chamber test process in the plurality of process chambers.
 6. The setup system of one of claims 1 and 2, wherein the substrate processing apparatus is a cluster type or in-line type apparatus.
 7. A test terminal of a setup system in claim 2, configured to execute a test terminal program performing functions of: transmitting a process chamber test operation command to a plurality of process chamber control units through a pseudo comprehensive control unit; and receiving through the pseudo comprehensive control unit process chamber test operation reports obtained by individually testing operations of the plurality of process chambers by the plurality of process chamber control units according to the process chamber test operation command received from the pseudo comprehensive control unit.
 8. A setup system at least comprising: a substrate processing apparatus including: a plurality of process chambers configured to process substrates; a plurality of process chamber control units configured to individually control operations of the plurality of process chambers; a comprehensive control unit configured to comprehensively control the operations of the plurality of process chambers through the plurality of process chamber control units; a first operation unit configured to receive operation reports from the plurality of process chamber control units through the comprehensive control unit; a test terminal comprising a pseudo comprehensive control unit configured to comprehensively control the operations of the plurality of process chambers through the process chamber control units; and a second operation unit configured to receive process chamber test operation reports from the process chamber control units through the pseudo comprehensive control unit, wherein the test terminal is connected to the plurality of process chamber control units with the comprehensive control unit and the first operation unit being disconnected from the plurality of process chamber control units, and wherein the second operation unit transmits a process chamber test operation command to the plurality of process chamber control units through the pseudo comprehensive control unit, and receives through the pseudo comprehensive control unit the process chamber test operation reports obtained by individually testing the operations of the plurality of process chambers by the plurality of process chamber control units according to the process chamber test operation command received from the pseudo comprehensive control unit.
 9. The setup system of claim 8, wherein the substrate processing apparatus further comprises: a carrying chamber communicating with each of the plurality of process chambers; and a carrying mechanism configured to carry the substrates between the plurality of process chambers and the carrying chamber, wherein the first operation unit connected to the comprehensive control unit and the plurality of process chamber control units transmits a carrying test operation command to the comprehensive control unit with the test terminal being disconnected from the plurality of process chamber control units, and wherein the comprehensive control unit controls a carrying operation of the carrying mechanism by communicating the plurality of process chambers with the carrying chamber, tests the carrying operation of the carrying mechanism, and transmits a carrying test operation report to the first operation unit according to the carrying test operation command received from the test terminal.
 10. The setup system of claim 8, wherein the test terminal program performs a process chamber test operation including at least one of: an input/output check process wherein an operation check of at least one input/output valve included in the substrate processing apparatus is performed; an interlock check process wherein a depressurization operation check of interiors of the plurality of process chambers included in the substrate processing apparatus is performed; and a robot teaching process wherein a carrying operation check of the carrying mechanism included in the substrate processing apparatus is performed.
 11. The setup system of claim 10, wherein a plurality of the test terminal is provided, and each of the plurality of the test terminal executes the test terminal program to concurrently perform a process chamber test process in the plurality of process chambers.
 12. The setup system of claim 8, wherein the substrate processing apparatus is a cluster type or in-line type apparatus. 